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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH IXFT IXFV IXFV
20N80P 20N80P 20N80P 20N80PS
VDSS ID25
RDS(on) trr
= 800 V = 20 A 520 m 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 TC = 25 C
Maximum Ratings 800 800 30 40 20 50 10 30 1.0 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C C
TO-247 (IXFH)
(TAB)
TO-268 (IXFT)
G
S
D (TAB)
PLUS220 (IXFV)
G
D
S
D (TAB)
Maximum lead temperature for soldering Plastic case for 10 s Mounting torque (TO-247) Mounting force (PLUS220) TO-247 TO-268 PLUS220 types
300 260
PLUS220 SMD(IXFV..S)
1.13/10 Nm/lb.in. 1..65 / 2.5..15 6 5.5 4 N/lb g g g G S
D (TAB)
G = Gate S = Source Features
D = Drain Tab = Drain
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 200 25 1000 520 V V nA A A m
l l l
l
International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
l l l
VGS = 10 V, ID = 10 A Pulse test, t 300 s, duty cycle d 2 %
Easy to mount Space savings High power density
DS99511E(03/06)
www..net (c) 2006 IXYS All rights reserved
IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS
Symbol Test Conditions Characteristic Values (TJ = 25 C unless otherwise specified) Min. Typ. Max. 14 23 4685 VGS = 0 V, VDS = 25 V, f = 1 MHz 356 26 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A RG = 2 (External) 24 85 24 86 VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A 27 24 0.25 (TO-247, PLUS220) 0.21 S pF pF pF ns ns ns ns nC nC nC C/W C/W
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS = 20 V; ID = 10 A, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25 C unless otherwise specified) Min. Typ. Max. 20 50 1.5 250 0.8 6.0 A A V ns C A
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s VR = 100V; VGS = 0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS
Fig. 1. Output Characte ris tics @ 25C
20 18 16 14 V GS = 10V 7V 6V 36 32 28 6V V GS = 10V 7V
Fig. 2. Exte nde d Output Characte ris tics @ 25C
I D - Amperes
12 10 8 6 4 2 0 0 2 4 6 8 10 12 5V
I D - Amperes
24 20 16 12 8 4 0 0 3 6 9 12 15 18 21 24 27 30 5V
V D S - V olts Fig. 3. Output Characte ris tics @ 125C
20 18 16 14 V GS = 10V 7V 2.6 2.4 2.2 V GS = 10V
V D S - V olts Fig. 4. RDS(on ) Norm alize d to ID = 10A V alue vs . Junction Te m pe ratur e
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 I D = 20A I D = 10A
I D - Amperes
12 10 8 6 4 2 0 0 2 4 6 8 10 12 14
6V
5V
16
18
20
22
-50
-25
0
25
50
75
100
125
150
V D S - V olts Fig. 5. RDS(on) Nor m alize d to ID = 10A V alue vs . Drain Curre nt
2.6 2.4 V GS = 10V TJ = 125 C 22 20 18 16
TJ - Degrees Centigrade Fig. 6. Dr ain Curr e nt vs . Cas e Te m pe r ature
R D S ( o n ) - Normalized
2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25
I D - Amperes
TJ = 25 C 30 35 40
14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150
I D - A mperes
TC - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS
Fig. 7. Input Adm ittance
24 40 35 30 TJ = -40 C 25 C 125 C
Fig. 8. Tr ans conductance
20 16 TJ = 125 C 12 25 C -40 C 8 4
I D - Amperes
- Siemens
25 20 15 10 5 0
0 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 5.75
g
0
fs
5
10
15
20
25
V G S - V olts Fig. 9. Source Cur r e nt vs . Sour ce -To-Dr ain V oltage
60 50 40 10 9 8 7 V DS = 400V I D = 10A I G = 10m A
I D - A mperes Fig. 10. Gate Char ge
I S - Amperes
V G S - Volts
TJ = 25 C 0.9 1 1.1 1.2
6 5 4 3 2 1
30 20 10 0 0.4 0.5 0.6 0.7 0.8 TJ = 125 C
0 0 10 20 30 40 50 60 70 80 90
V S D - V olts Fig. 11. Capacitance
10000 1.00
Q
G
- nanoCoulombs
Fig. 12. M axim um Tr ans ie nt The rm al Re s is tance
Capacitance - picoFarads
C is s 1000
R ( t h ) J C - C / W
0.10
C os s 100
f = 1MH z 10 0 5 10 15
C rs s 20 25 30 35 40
0.01 0.1 1 10 100 1000
V D S - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - milliseconds
IXFH 20N80P IXFT 20N80P IXFV 20N80P IXFV 20N80PS
Package Outline Drawings
TO-247AD (IXFH) Outline TO-268 (IXFT) Outline
1
2
3
Dim. A A1 A2 b b1 b2 C D E e L L1 P Q R S
Millimeter Min. Max. 4.7 2.2 2.2 1.0 1.65 2.87 .4 20.80 15.75 5.20 19.81 3.55 5.89 4.32 6.15 5.3 2.54 2.6 1.4 2.13 3.12 .8 21.46 16.26 5.72 20.32 4.50 3.65 6.40 5.49 BSC
Inches Min. Max. .185 .087 .059 .040 .065 .113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225 .800 .177 .144 0.252 .216 BSC
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S) Outline
(c) 2006 IXYS All rights reserved
IXYS REF: F_20N80P (7J) 03-01-06-A.XLS

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